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Data Sheet No. PD60269
IRS2003(S)PbF
HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
? Fully operational to +200 V
? Tolerant to negative transient voltage, dV/dt
Product Summary
V OFFSET
200 V max.
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout
? 3.3 V, 5 V, and 15 V logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? Internal set deadtime
? High - side output in phase with HIN input
? Low - side output out of phase with LIN input
? RoHS compliant
I O +/-
V OUT
t on/off (typ.)
Deadtime (typ.)
Packages
130 mA/270 mA
10 V - 20 V
680 ns/150 ns
520 ns
Description
The IRS2003 is a high voltage, high speed power
MOSFET and IGBT drivers with dependent high - and
low - side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
8-Lead PDIP
IRS2003
8-Lead SOIC
IRS2003S
compatible with standard CMOS or LSTTL output, down
to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high - side
configuration which operates up to 200 V.
Typical Connection
up to 200 V
V CC
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only. Please refer to
our Application Notes and DesignTips for proper circuit board layout.
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